Asymmetric pulsing for reliable operation of titanium/manganite memristors

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of...

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Bibliographic Details
Published in:Applied physics letters 2011-03, Vol.98 (12), p.123502-123502-3
Main Authors: Gomez-Marlasca, F., Ghenzi, N., Stoliar, P., Sánchez, M. J., Rozenberg, M. J., Leyva, G., Levy, P.
Format: Article
Language:English
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Summary:We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than 10 5 switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3565431