Transient diffusion of Ga in amorphous silicon

The redistribution of Ga in amorphous silicon (a-Si) in the temperature range of 560–830 K by means of medium-energy ion scattering has been studied. During the initial 10 s of the annealing the diffusivity shows a transient behavior that is attributed to the change in the relaxation state of the am...

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Bibliographic Details
Published in:Journal of applied physics 1994-11, Vol.76 (10), p.5719-5723
Main Authors: Zagwijn, P. M., Huisman, W. J., Polman, A., Vlieg, E., Reader, A. H., Gravesteijn, D. J.
Format: Article
Language:English
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Summary:The redistribution of Ga in amorphous silicon (a-Si) in the temperature range of 560–830 K by means of medium-energy ion scattering has been studied. During the initial 10 s of the annealing the diffusivity shows a transient behavior that is attributed to the change in the relaxation state of the amorphous matrix. From 560 to 830 K the diffusivity during relaxation is enhanced by seven to two orders of magnitude compared to the value for bulk a-Si. Possible models that show the observed transient diffusion behavior are discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.357079