Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors

We report the characteristics of HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors on different reconstructed surface InAs substrates. The HfO2/Al2O3 gate dielectric films deposited on InAs were used to study the interfacial reaction. Compared with (2×4)-surface sample, improvements of capacita...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2011-03, Vol.98 (12)
Main Authors: Lin, Hau-Yu, Wu, San-Lein, Cheng, Chao-Ching, Ko, Chih-Hsin, Wann, Clement H., Lin, You-Ru, Chang, Shoou-Jinn, Wu, Tai-Bor
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the characteristics of HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors on different reconstructed surface InAs substrates. The HfO2/Al2O3 gate dielectric films deposited on InAs were used to study the interfacial reaction. Compared with (2×4)-surface sample, improvements of capacitance-voltage characteristics for (1×1)-surface sample with lower frequency-dependent capacitance dispersion and higher inversion capacitance are attributed to lower indium composition and less arsenic oxide at Al2O3/InAs interface, as confirmed by x-ray photoelectron spectroscopy. It indicates that the equivalent dangling bond of cations and anions on (1×1)-surface sample tends to avoid the oxidization process and become less pinning.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3571293