Forward tunneling current in HgCdTe photodiodes

Current voltage characteristics of narrow-gap Hg1−xCdxTe photodiodes, fabricated on liquid phase epitaxy and metalorganic chemical vapor deposition grown layers, have been investigated. It is shown that the tunneling-recombination process is the dominant mechanism that determines the dark current at...

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Bibliographic Details
Published in:Journal of applied physics 1994-10, Vol.76 (7), p.4420-4425
Main Authors: Sarusi, G., Zemel, A., Sher, Ariel, Eger, D.
Format: Article
Language:English
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Summary:Current voltage characteristics of narrow-gap Hg1−xCdxTe photodiodes, fabricated on liquid phase epitaxy and metalorganic chemical vapor deposition grown layers, have been investigated. It is shown that the tunneling-recombination process is the dominant mechanism that determines the dark current at forward and at low reverse bias. This mechanism also determines the junction zero-bias resistance.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.357336