Carbon diffusion in alumina from carbon and Ti 2 AlC thin films

Carbon diffusion is observed in single crystal α - Al 2 O 3 substrates from carbon and Ti 2 AlC thin films synthesized via pulsed cathodic arc deposition. Diffusion was found to occur at substrate temperatures of 570°C and above. The diffusion coefficient of carbon in α - Al 2 O 3 is estimated to be...

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Published in:Journal of applied physics 2011-04, Vol.109 (8), p.083503-083503-5
Main Authors: Guenette, Mathew C., Tucker, Mark D., Ionescu, Mihail, Bilek, Marcela M. M., McKenzie, David R.
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description Carbon diffusion is observed in single crystal α - Al 2 O 3 substrates from carbon and Ti 2 AlC thin films synthesized via pulsed cathodic arc deposition. Diffusion was found to occur at substrate temperatures of 570°C and above. The diffusion coefficient of carbon in α - Al 2 O 3 is estimated to be of the order 3 × 10 - 13 cm 2 /s for deposition temperatures in the 570- 770 ∘ C range by examining elastic recoil detection analysis (ERDA) elemental depth profiles. It is suggested that an appropriate diffusion barrier may be useful when depositing carbon containing thin films on α - Al 2 O 3 substrates at high temperatures.
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title Carbon diffusion in alumina from carbon and Ti 2 AlC thin films
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