Strain dependence of electron-phonon energy loss rate in many-valley semiconductors

We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si , at phonon temperatures between 200 and 4...

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Bibliographic Details
Published in:Applied physics letters 2011-05, Vol.98 (18), p.182103-182103-3
Main Authors: Muhonen, J. T., Prest, M. J., Prunnila, M., Gunnarsson, D., Shah, V. A., Dobbie, A., Myronov, M., Morris, R. J. H., Whall, T. E., Parker, E. H. C., Leadley, D. R.
Format: Article
Language:English
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Summary:We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si , at phonon temperatures between 200 and 480 mK, is more than an order of magnitude lower than that for a similar unstrained sample.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3579524