Nano-ripple formation on different band-gap semiconductor surfaces using femtosecond pulses

• Published in: Journal of applied physics 2011-04, Vol.109 (8), p.084347-084347-8
• Main Authors: Chakravarty, U., Ganeev, R. A., Naik, P. A., Chakera, J. A., Babu, M., Gupta, P. D.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.3580329

Nano-ripple formation from ultrashort laser pulse irradiation of semiconductors of different band gaps has been studied using a Ti-sapphire laser with 8 mJ energy, 45 fs pulse duration and 800 nm wavelength (1.5eV) at a fluence in the range of ∼100 mJ/cm 2 −1J/cm 2 . The effects of the number of laser shots, angle of incidence, laser polarization, fluence, incident laser wavelength, bandgap, and ambient medium on the ripple period, have been studied. Depending upon the experimental parameters nano-ripple sizes varied in the range of λ - λ / 9 . The studies clearly show that narrower nano-ripples are formed from wide bandgap semiconductors. In addition, the width of the nano-ripples decreases with the laser wavelength and fluence. The observed results are explained considering the transient metallic nature of the semiconductor surface on irradiation with intense femtosecond pulse which excites surface plasmon leading to the nano-ripple formation. The critical role of the surface plasma electron density in deciding ripple period is identified which helps in generation of narrow sub-wavelength nano-ripples.