Hot spot analysis in integrated circuit substrates by laser mirage effect

This work shows an analytical and experimental technique for characterizing radial heat flow present in integrated circuits (ICs) when power is dissipated by integrated devices. The analytical model comes from the resolution of the Fermat equation for the trajectory of rays and supposing a spherical...

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Bibliographic Details
Published in:Applied physics letters 2011-04, Vol.98 (16), p.164104-164104-3
Main Authors: Perpiñà, X., Jordà, X., Vellvehi, M., Altet, J.
Format: Article
Language:English
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Summary:This work shows an analytical and experimental technique for characterizing radial heat flow present in integrated circuits (ICs) when power is dissipated by integrated devices. The analytical model comes from the resolution of the Fermat equation for the trajectory of rays and supposing a spherical heat source dissipating a time-periodic power. An application example is presented; hence demonstrating how hot spots and heat transfer phenomena in the IC substrate can be characterized. The developed method may become a practical alternative to usual off-chip techniques for inspecting hot spots in ICs and to experimentally characterize heat flow in the semiconductor substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3581038