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Electrical properties of rolled-up p-type Si/SiGe heterostructures

We report a theoretical study of the hole density and the low-field mobility in modulation p-doped rolled-up Si/SiGe heterostructures. Solving coupled Poisson and Schrödinger equations, we show that the total hole density is strongly affected by charged surface states and can reach value of 10 11  ...

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Bibliographic Details
Published in:Applied physics letters 2011-05, Vol.98 (19), p.192109-192109-3
Main Authors: Demarina, N. V., Grützmacher, D. A.
Format: Article
Language:English
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Summary:We report a theoretical study of the hole density and the low-field mobility in modulation p-doped rolled-up Si/SiGe heterostructures. Solving coupled Poisson and Schrödinger equations, we show that the total hole density is strongly affected by charged surface states and can reach value of 10 11   cm − 2 for available doping level at room and low temperature. The simulation of the hole transport along the structure axis based on a Monte Carlo method reveals that the interface roughness scattering is a main mechanism limiting the mobility magnitude, which reaches the value of 10 4   cm 2 / V s .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3584869