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Electrical properties of rolled-up p-type Si/SiGe heterostructures
We report a theoretical study of the hole density and the low-field mobility in modulation p-doped rolled-up Si/SiGe heterostructures. Solving coupled Poisson and Schrödinger equations, we show that the total hole density is strongly affected by charged surface states and can reach value of 10 11 ...
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Published in: | Applied physics letters 2011-05, Vol.98 (19), p.192109-192109-3 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report a theoretical study of the hole density and the low-field mobility in modulation p-doped rolled-up Si/SiGe heterostructures. Solving coupled Poisson and Schrödinger equations, we show that the total hole density is strongly affected by charged surface states and can reach value of
10
11
cm
−
2
for available doping level at room and low temperature. The simulation of the hole transport along the structure axis based on a Monte Carlo method reveals that the interface roughness scattering is a main mechanism limiting the mobility magnitude, which reaches the value of
10
4
cm
2
/
V
s
. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3584869 |