Erbium luminescence in porous silicon doped from spin-on films

Erbium photoluminescence at room temperature and at 77 K has been observed from porous silicon doped with erbium from a spin-on silica gel film. Erbium incorporation into silicon dioxide at the surface of porous silicon and rapid thermal processing at temperatures higher than 1223 K were found to be...

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Bibliographic Details
Published in:Journal of applied physics 1995-03, Vol.77 (6), p.2679-2683
Main Authors: Dorofeev, A. M., Gaponenko, N. V., Bondarenko, V. P., Bachilo, E. E., Kazuchits, N. M., Leshok, A. A., Troyanova, G. N., Vorosov, N. N., Borisenko, V. E., Gnaser, H., Bock, W., Becker, P., Oechsner, H.
Format: Article
Language:English
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Summary:Erbium photoluminescence at room temperature and at 77 K has been observed from porous silicon doped with erbium from a spin-on silica gel film. Erbium incorporation into silicon dioxide at the surface of porous silicon and rapid thermal processing at temperatures higher than 1223 K were found to be a necessary prerequisite for erbium-related luminescence in porous silicon. No erbium diffusion into monocrystalline silicon from the spin-on films was observed. The depth-dependent erbium concentration in the bulk of porous silicon was determined by secondary-neutral- and secondary-ion-mass spectrometry depth profiling. The laterally resolved erbium distribution in the porous silicon was derived from energy-dispersive x-ray analysis. Possible mechanisms of erbium-related luminescence in porous silicon are discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.358735