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Microwave response of YBa2Cu3O7− x grain boundary junction

YBa2Cu3O7−x superconductor thin films were deposited on LaAlO3(100) single crystal substrates using a metalorganic chemical vapor deposition method. These films showed a critical temperature of about 90 K and a critical current density of over 105 A/cm2 at 77 K. These films showed granular structure...

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Published in:Journal of applied physics 1995-03, Vol.77 (5), p.2193-2195
Main Authors: Cho, Changhyun, Shin, Joongshik, Hwang, Doosup, Kim, Youngkeun, Lee, Youngjong, Chun, John S., No, Kwangsoo, Bae, Sungjoon, Hong, Seungbum
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Language:English
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container_issue 5
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container_title Journal of applied physics
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creator Cho, Changhyun
Shin, Joongshik
Hwang, Doosup
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No, Kwangsoo
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description YBa2Cu3O7−x superconductor thin films were deposited on LaAlO3(100) single crystal substrates using a metalorganic chemical vapor deposition method. These films showed a critical temperature of about 90 K and a critical current density of over 105 A/cm2 at 77 K. These films showed granular structure with 0.5–1.5 μm grains. Bridge-type junctions, 6 μm in width and 6 μm in length, were fabricated using photolithography and Ar ion milling techniques. Current-voltage (I-V) characteristics of these junctions with microwave irradiation at 77 K were studied. The critical current densities decreased as the irradiated microwave power increased. When microwaves are irradiated on the bridge at 77 K, the I-V characteristics showed constant voltage steps (Shapiro steps) at ΔV=nhν/2e, but subharmonic steps.
doi_str_mv 10.1063/1.358799
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title Microwave response of YBa2Cu3O7− x grain boundary junction
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