Self-organization of mesoscopically ordered parallel Gd-silicide nanowire arrays on a Si(110)-16×2 surface: A massively parallel active architecture

A perfect self-organization of large-area, highly regular parallel arrays, consisting of uniformly spaced, epitaxial Gd-silicide nanowires with an identical width and a typical periodicity as small as ∼4 nm and ∼7.2 nm, respectively, and an average length exceeding 1 μm, has been achieved through th...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2011-05, Vol.98 (19)
Main Authors: Hong, Ie-Hong, Tsai, Yung-Feng, Chen, Tsung-Ming
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A perfect self-organization of large-area, highly regular parallel arrays, consisting of uniformly spaced, epitaxial Gd-silicide nanowires with an identical width and a typical periodicity as small as ∼4 nm and ∼7.2 nm, respectively, and an average length exceeding 1 μm, has been achieved through the heteroepitaxial growth of Gd silicides on a Si(110)-16×2 surface. Scanning tunneling microscopy/spectroscopy studies clearly show that each metallic Gd-silicide nanowire consists of three atomically precise chain structures with a peculiar charge arrangement of alternating filled and empty states. This unique, massively parallel active architecture of well-ordered Gd-silicide NWs with exotic electronic properties can be exploited in nanoelectronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3590199