Impurity effects on the generation and velocity of dislocations in Ge

The dynamic behavior of dislocations in heavily impurity (Ga, As, O) -doped Ge crystals was investigated as a function of stress and temperature by means of the etch-pit technique. The Ga and O impurities effectively suppressed dislocation generation from a surface scratch, while the As impurity did...

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Bibliographic Details
Published in:Journal of applied physics 2011-06, Vol.109 (11), p.113502-113502-5
Main Authors: Murao, Yu, Taishi, Toshinori, Tokumoto, Yuki, Ohno, Yutaka, Yonenaga, Ichiro
Format: Article
Language:English
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Summary:The dynamic behavior of dislocations in heavily impurity (Ga, As, O) -doped Ge crystals was investigated as a function of stress and temperature by means of the etch-pit technique. The Ga and O impurities effectively suppressed dislocation generation from a surface scratch, while the As impurity did not strongly do so. Dislocations in Ga- and O-doped Ge crystals were supposed to be immobilized by the stable complexes formed through the impurity segregation and reaction. Remarkably, the O impurity, even at a low concentration of 10 16 cm −3 , induced the suppression of dislocation generation. The As impurity enhanced and the Ga impurity retarded dislocation velocity in motion. The O impurity had no effect on the velocity of the dislocations.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3592226