Sub-bandgap absorption in Ti implanted Si over the Mott limit

We have analyzed the structural and optical properties of Si implanted with very high Ti doses and subsequently pulsed-laser melted (PLM). After PLM, all samples exhibit an abrupt and roughly uniform, box-shaped Ti profile, with a concentration around 2×10 20 cm −3 , which is well above the Mott lim...

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Bibliographic Details
Published in:Journal of applied physics 2011-06, Vol.109 (11), p.113541-113541-6
Main Authors: Olea, J., del Prado, A., Pastor, D., Mártil, I., González-Díaz, G.
Format: Article
Language:English
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Summary:We have analyzed the structural and optical properties of Si implanted with very high Ti doses and subsequently pulsed-laser melted (PLM). After PLM, all samples exhibit an abrupt and roughly uniform, box-shaped Ti profile, with a concentration around 2×10 20 cm −3 , which is well above the Mott limit, within a 150 nm thick layer. Samples PLM-annealed at the highest energy density (1.8 J/cm 2 ) exhibit good lattice reconstruction. Independent of the annealing energy density, in all of the samples we observe strong sub-bandgap absorption, with absorption coefficient values between 4×10 3 and 10 4 cm −1 . These results are explained in terms of the formation of an intermediate band (IB) originated from the Ti deep levels.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3596525