Reduced leakage current in BiFeO3 thin films with rectifying contacts

BiFeO 3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole–Frenkel emission to interface-limited Schottky emission. In the...

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Bibliographic Details
Published in:Applied physics letters 2011-06, Vol.98 (23)
Main Authors: Shuai, Yao, Zhou, Shengqiang, Streit, Stephan, Reuther, Helfried, Bürger, Danilo, Slesazeck, Stefan, Mikolajick, Thomas, Helm, Manfred, Schmidt, Heidemarie
Format: Article
Language:English
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Summary:BiFeO 3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole–Frenkel emission to interface-limited Schottky emission. In the present letter, we show that only the growth rate of the BiFeO3 films close to the metal contacts has to be increased in order to reduce the leakage current and to observe saturated polarization-electric field hysteresis loops.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3597794