Antisite defects created in neutron irradiated GaP crystals

This article compares the nature of phosphorus antisite defects in as-grown and neutron irradiated GaP crystals. Electron spin resonance studies indicate that these defects in both kinds of crystals have identical close neighbors consisting of four phosphorus atoms. Neutron irradiation of GaP introd...

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Bibliographic Details
Published in:Journal of applied physics 1995-09, Vol.78 (6), p.3680-3685
Main Authors: Palczewska, M., Jasinski, J., Korona, K., Kaminska, M., Bourret, E. D., Elliot, A. G.
Format: Article
Language:English
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Summary:This article compares the nature of phosphorus antisite defects in as-grown and neutron irradiated GaP crystals. Electron spin resonance studies indicate that these defects in both kinds of crystals have identical close neighbors consisting of four phosphorus atoms. Neutron irradiation of GaP introduced an additional defect (called WA1), which is linked to a gallium antisite. Characteristic absorption bands and conductivity of neutron irradiated GaP crystals are discussed as well.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.359945