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Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors

High-speed metal-semiconductor-metal (MSM) photodetectors based on Schottky-contacted core/shell GaAs/AlGaAs and bare GaAs nanowires were fabricated and characterized. The measured core/shell temporal response has a ∼ 10   ps full-width at half-maximum and an estimated corrected value less than 5 ps...

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Bibliographic Details
Published in:Applied physics letters 2011-06, Vol.98 (24), p.241113-241113-3
Main Authors: Gallo, Eric M., Chen, Guannan, Currie, Marc, McGuckin, Terrence, Prete, Paola, Lovergine, Nico, Nabet, Bahram, Spanier, Jonathan E.
Format: Article
Language:English
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Summary:High-speed metal-semiconductor-metal (MSM) photodetectors based on Schottky-contacted core/shell GaAs/AlGaAs and bare GaAs nanowires were fabricated and characterized. The measured core/shell temporal response has a ∼ 10   ps full-width at half-maximum and an estimated corrected value less than 5 ps. The bare GaAs devices exhibit a slower response ( ∼ 35   ps ) along with a slow decaying persistent photocurrent ( ∼ 80   s ) . The core/shell devices exhibit significantly improved dc and high-speed performance over bare nanowires and comparable performance to planar MSM photodetectors. The picosecond temporal response, coupled with picoampere dark current, demonstrate the potential for core/shell nanowires in high-speed imaging arrays and on-chip optical interconnects.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3600061