Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation

The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO2/GeO2 bilayer passivation. PMA at 450 °C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from −0.79 to...

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Bibliographic Details
Published in:Applied physics letters 2011-06, Vol.98 (25)
Main Authors: Nakashima, Hiroshi, Iwamura, Yoshiaki, Sakamoto, Keita, Wang, Dong, Hirayama, Kana, Yamamoto, Keisuke, Yang, Haigui
Format: Article
Language:English
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Summary:The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO2/GeO2 bilayer passivation. PMA at 450 °C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from −0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2/GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6×1011 to 2.5×1011 cm−2 eV−1, as results of the nitrogen termination of defects at the SiO2/GeO2 interface and/or in the GeO2 interlayer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3601480