High-resolution x-ray diffractometry of ZnTe layers at elevated temperatures

A high-temperature multicrystal x-ray diffractometer is used for measurement of elastic constants c11, c12 and the thermal-expansion coefficient of a heteroepitaxial ZnTe layer grown on a (001) oriented GaAs substrate. In addition to the standard double-crystal measurement, a new triple-crystal meth...

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Bibliographic Details
Published in:Journal of applied physics 1995-07, Vol.78 (2), p.862-867
Main Authors: Bochníček, Z., Holý, V., Wolf, K., Stanzl, H., Gebhardt, W.
Format: Article
Language:English
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Summary:A high-temperature multicrystal x-ray diffractometer is used for measurement of elastic constants c11, c12 and the thermal-expansion coefficient of a heteroepitaxial ZnTe layer grown on a (001) oriented GaAs substrate. In addition to the standard double-crystal measurement, a new triple-crystal method is proposed. This method eliminates the angular instabilities of the high-temperature goniometer and bending of the substrate. The new method was used for determination of the thermal-expansion coefficient of a GaAs substrate. As a result of detailed discussion, the optimal experimental conditions are proposed for the limitation of the errors.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.360276