Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered 28 Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear c...

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Bibliographic Details
Published in:Applied physics letters 2011-07, Vol.99 (3), p.032101-032101-3
Main Authors: Stegner, A. R., Tezuka, H., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H.-J., Thewalt, M. L. W., Itoh, K. M., Brandt, M. S.
Format: Article
Language:English
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Summary:Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered 28 Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δ m =1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2×10 15 cm −3 . When the impurity level is decreased further, the linewidth does not fall below 2.3±0.2 mT, for which we discuss possible origins.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3606548