A technology oriented model for transient diffusion and activation of boron in silicon

We propose a model for point-defect-assisted transient diffusion and activation of high-dose boron implants in silicon. To model transient diffusion, a nonlinear equilibrium clustering model for point defects is used. The activation of boron is modeled as a Fermi-level-dependent transformation of in...

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Bibliographic Details
Published in:Journal of applied physics 1995-09, Vol.78 (6), p.3671-3679
Main Authors: Höfler, A., Feudel, Th, Strecker, N., Fichtner, W., Stegemann, K.-H., Syhre, H., Dallmann, G.
Format: Article
Language:English
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Summary:We propose a model for point-defect-assisted transient diffusion and activation of high-dose boron implants in silicon. To model transient diffusion, a nonlinear equilibrium clustering model for point defects is used. The activation of boron is modeled as a Fermi-level-dependent transformation of inactive dopant clusters to substitutional atoms. Comparison with experimental data shows that this approach can provide a description of both rapid thermal annealing and long-time furnace annealing steps, with an excellent predictive capability for both chemical and electrically active profiles.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.360748