Electrical measurement of non-destructively p-type doped graphene using molybdenum trioxide

We demonstrate effective non-destructive p-type doping of graphene via surface modification with molybdenum trioxide (MoO 3 ) thin film using electrical transport measurements. The p-type doping via MoO 3 modification of graphene leads to the downward shift of Fermi level towards the valence band. M...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2011-07, Vol.99 (1), p.012112-012112-3
Main Authors: Xie, Lanfei, Wang, Xiao, Mao, Hongying, Wang, Rui, Ding, Mianzhi, Wang, Yu, Özyilmaz, Barbaros, Ping Loh, Kian, Wee, Andrew T. S., Ariando, Chen, Wei
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We demonstrate effective non-destructive p-type doping of graphene via surface modification with molybdenum trioxide (MoO 3 ) thin film using electrical transport measurements. The p-type doping via MoO 3 modification of graphene leads to the downward shift of Fermi level towards the valence band. MoO 3 modified graphene retains its high charge carrier mobility, facilitating the observation of quantum Hall effect. In-situ ultraviolet photoelectron spectroscopy studies also show that air exposure of MoO 3 modified graphene reduces the doping efficiency.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3609318