Formation of shallow donor in fluorine-implanted silicon

A shallow fluorine-related donor is reported. The donor has been revealed by capacitance–voltage profiling applied to furnace-annealed, fluorine-implanted silicon samples. The implantations were carried out at high energy, in the range 5–7 MeV. The assignment of the donor structure to fluorine resul...

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Bibliographic Details
Published in:Journal of applied physics 1996-02, Vol.79 (3), p.1807-1809
Main Authors: Holm, B., Nielsen, K. Bonde
Format: Article
Language:English
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Summary:A shallow fluorine-related donor is reported. The donor has been revealed by capacitance–voltage profiling applied to furnace-annealed, fluorine-implanted silicon samples. The implantations were carried out at high energy, in the range 5–7 MeV. The assignment of the donor structure to fluorine results from a detailed examination of the effective space-charge distribution around the implantation range (≊4 μm) in comparison with data obtained for similar oxygen-implanted samples. The depth-integrated density of the donors formed after annealing at 700 °C is ≊3×1010 cm−2 corresponding to ≊1% of the implantation dose. The density increases by more than one order of magnitude for samples annealed only at 600 °C. In addition to the shallow donor level (or levels) a fluorine-specific level at Ec−Et≊0.15 eV has been assigned by application of deep-level transient spectroscopy.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.360973