Optically pumped GaN/Al0.1Ga0.9N double-heterostructure ultraviolet laser

Molecular-beam epitaxy was used to grow a 100 nm Al0.1Ga0.9N/100 nm GaN/500 nm Al0.1Ga0.9N double heterostructure on a 10-μm-thick GaN buffer layer grown with hydride vapor phase epitaxy on (0001) sapphire. Lasing from the 100 nm GaN active layer has been obtained at ∼359 nm at liquid-nitrogen tempe...

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Bibliographic Details
Published in:Journal of applied physics 1996-02, Vol.79 (4), p.2148-2150
Main Authors: Aggarwal, R. L., Maki, P. A., Molnar, R. J., Liau, Z.-L., Melngailis, I.
Format: Article
Language:English
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Summary:Molecular-beam epitaxy was used to grow a 100 nm Al0.1Ga0.9N/100 nm GaN/500 nm Al0.1Ga0.9N double heterostructure on a 10-μm-thick GaN buffer layer grown with hydride vapor phase epitaxy on (0001) sapphire. Lasing from the 100 nm GaN active layer has been obtained at ∼359 nm at liquid-nitrogen temperature (77 K) and at ∼365 nm at room temperature (295 K), using transverse optical pumping at 337.1 nm with a 600 ps transversely excited atmospheric pressure pulsed nitrogen laser. Threshold pump fluences were measured to be 0.3 and 0.5 mJ/cm2 at 77 and 295 K, respectively, for a laser with 65 μm cavity length. In a laser of 23 μm cavity length, longitudinal cavity modes were observed with 0.56 nm spacing, corresponding to a group refractive index of 5.0 at the lasing wavelength.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.361044