Passivation of porous silicon by wet thermal oxidation

A wet thermal oxidation method is proposed to passivate the electrochemically etched porous silicon. Bright and stable photoluminescence is achieved by wet oxidation at relatively low temperatures of 400–500 °C. The Fourier transform infrared absorption shows that the formation of SiH(O3), SiH(SiO2)...

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Bibliographic Details
Published in:Journal of applied physics 1996-03, Vol.79 (6), p.3282-3285
Main Authors: Chen, Huajie, Hou, Xiaoyuan, Li, Gubo, Zhang, Fulong, Yu, Mingren, Wang, Xun
Format: Article
Language:English
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Summary:A wet thermal oxidation method is proposed to passivate the electrochemically etched porous silicon. Bright and stable photoluminescence is achieved by wet oxidation at relatively low temperatures of 400–500 °C. The Fourier transform infrared absorption shows that the formation of SiH(O3), SiH(SiO2), SiH2(O2) bonds may be responsible to the stabilization of luminescence under the laser illumination.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.361226