The Staebler–Wronski effect and the thermal equilibration of defect and free carrier concentrations

Light-induced changes in the photo-, σph, and dark, σd, conductivities of undoped hydrogenated amorphous silicon (a-Si:H) and amorphous silicon–carbon are investigated as functions of deposition and measurement temperature. Previous work described the temperature dependence of the annealed state σph...

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Bibliographic Details
Published in:Journal of applied physics 1996-03, Vol.79 (6), p.3075-3081
Main Authors: Dawson, R. M. A., Fortmann, C. M.
Format: Article
Language:English
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Summary:Light-induced changes in the photo-, σph, and dark, σd, conductivities of undoped hydrogenated amorphous silicon (a-Si:H) and amorphous silicon–carbon are investigated as functions of deposition and measurement temperature. Previous work described the temperature dependence of the annealed state σph and σd of a series of intrinsic a-Si:H materials deposited over a range of substrate temperatures, 200 °C
ISSN:0021-8979
1089-7550
DOI:10.1063/1.361249