Phase evolution in low-pressure Se vapor selenization of evaporated Cu/In bilayer precursors

• Published in: Journal of applied physics 1996-04, Vol.79 (7), p.3585-3591
• Main Authors: Lakshmikumar, S. T., Rastogi, A. C.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.361411

Evolution of elemental binaries and single-phase copper indium diselenide, CuInSe2 (CIS) during Se vapor selenization of evaporated Cu/In bilayer metal precursors at pressures of 0.3–10 mbar and temperatures in the range of 260–400 °C has been investigated. At low pressures, the relative kinetics of selenization of Cu and In are changed resulting in the formation of single-phase CIS even at very low temperatures (260 °C). Optical, Auger, and x-ray photoelectron spectroscopy investigations are employed to characterize the chalcopyrite absorber layer. At higher pressures (≊7–10 mbar), simultaneous formation of the equilibrium binaries, CuSe and In2Se3 at low temperatures leads to the formation of CIS through a diffusion limited reaction of the binaries at higher temperatures. The availability of Se reacting species varies significantly in the pressure regime. At low reactor pressures and Se availability, the reaction CuSe+In(l)+Se→CIS, proceeds to completion even at low temperatures. The detailed study of the phase evolution is made by x-ray diffraction and scanning electron microscopy investigations and correlated with the Se availability in the reactor.