III-Nitride full-scale high-resolution microdisplays

We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes ( µ LEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnit...

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Bibliographic Details
Published in:Applied physics letters 2011-07, Vol.99 (3), p.031116-031116-3
Main Authors: Day, Jacob, Li, J., Lie, D. Y. C., Bradford, Charles, Lin, J. Y., Jiang, H. X.
Format: Article
Language:English
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Summary:We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes ( µ LEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to −100°C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between µ LED arrays and Si CMOS (complementary metal-oxide-semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3615679