Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Metal-oxide-semiconductor capacitor was fabricated using in situ O 2 plasma passivation and subsequent deposition of a HfO 2 high-k gate stack on Ge. By extracting flat band voltages from capacitors with different equivalent oxide thicknesses (EOT), the effect of forming gas annealing (FGA) and O 2...

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Bibliographic Details
Published in:Applied physics letters 2011-08, Vol.99 (5), p.052906-052906-3
Main Authors: Deng, Shaoren, Xie, Qi, Deduytsche, Davy, Schaekers, Marc, Lin, Dennis, Caymax, Matty, Delabie, Annelies, Van den Berghe, Sven, Qu, Xinping, Detavernier, Christophe
Format: Article
Language:English
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Summary:Metal-oxide-semiconductor capacitor was fabricated using in situ O 2 plasma passivation and subsequent deposition of a HfO 2 high-k gate stack on Ge. By extracting flat band voltages from capacitors with different equivalent oxide thicknesses (EOT), the effect of forming gas annealing (FGA) and O 2 ambient annealing on the fixed charge was systematically investigated. The O 2 ambient annealing is more effective than FGA as it reduced fixed charge density to 8.3×10 11 cm −2 compared to 4.5×10 12 cm −2 for at the same thermal budget and showed no degradation of EOT. Further, the distribution of fixed charges in gate stack was discussed in detail.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3622649