Molecular dynamics simulations of oxide memristors: Crystal field effects

We present molecular-dynamic simulations of memory resistors (memristors) including the crystal field effects on mobile ionic species such as oxygen vacancies appearing during operation of the device. Vacancy distributions show different patterns depending on the ratio of a spatial period of the cry...

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Bibliographic Details
Published in:Applied physics letters 2011-08, Vol.99 (5), p.053108-053108-3
Main Authors: Savel'ev, S. E., Alexandrov, A. S., Bratkovsky, A. M., Stanley Williams, R.
Format: Article
Language:English
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Summary:We present molecular-dynamic simulations of memory resistors (memristors) including the crystal field effects on mobile ionic species such as oxygen vacancies appearing during operation of the device. Vacancy distributions show different patterns depending on the ratio of a spatial period of the crystal field to a characteristic radius of the vacancy-vacancy interaction. There are signatures of the orientational order and of spatial voids in the vacancy distributions for some crystal field potentials. The crystal field stabilizes the patterns after they are formed, resulting in a non-volatile switching of the simulated devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3622665