Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics

Optical properties of Si-doped GaInP grown on Ge-on-Si substrates were investigated using photoluminescence (PL). Similar to spontaneously ordered GaInP, two peaks were observed around 1.74 and 1.85 eV at 19 K; however, no satellite peaks were observed in the selected-area diffraction pattern. Based...

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Bibliographic Details
Published in:Applied physics letters 2011-08, Vol.99 (9), p.091904-091904-3
Main Authors: Yang, Changjae, Lee, Sangsoo, Wook Shin, Keun, Oh, Sewoung, Park, Jinsub, Kim, Chang-Zoo, Park, Won-Kyu, Ha, Seung-kyu, Jun Choi, Won, Yoon, Euijoon
Format: Article
Language:English
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Summary:Optical properties of Si-doped GaInP grown on Ge-on-Si substrates were investigated using photoluminescence (PL). Similar to spontaneously ordered GaInP, two peaks were observed around 1.74 and 1.85 eV at 19 K; however, no satellite peaks were observed in the selected-area diffraction pattern. Based on temperature-dependent PL, the peak at 1.74 eV was attributed to the donor-acceptor pair transition caused by the amphoteric characteristics of Si and/or Ge from the dopant and/or substrate. In addition, the S-shape in the temperature dependence of the 1.85 eV peak was attributed to the interaction of the donor levels with the conduction band of GaInP.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3623757