Optical properties of high quality Cu2ZnSnSe4 thin films

Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and d...

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Published in:Applied physics letters 2011-08, Vol.99 (6)
Main Authors: Luckert, F., Hamilton, D. I., Yakushev, M. V., Beattie, N. S., Zoppi, G., Moynihan, M., Forbes, I., Karotki, A. V., Mudryi, A. V., Grossberg, M., Krustok, J., Martin, R. W.
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cited_by cdi_FETCH-LOGICAL-c260t-3db6ae52754506ac1cb59f315c4ba1ff22c4d448dbf11a821725fe0bddbc98993
cites cdi_FETCH-LOGICAL-c260t-3db6ae52754506ac1cb59f315c4ba1ff22c4d448dbf11a821725fe0bddbc98993
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container_issue 6
container_start_page
container_title Applied physics letters
container_volume 99
creator Luckert, F.
Hamilton, D. I.
Yakushev, M. V.
Beattie, N. S.
Zoppi, G.
Moynihan, M.
Forbes, I.
Karotki, A. V.
Mudryi, A. V.
Grossberg, M.
Krustok, J.
Martin, R. W.
description Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.
doi_str_mv 10.1063/1.3624827
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3624827</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3624827</sourcerecordid><originalsourceid>FETCH-LOGICAL-c260t-3db6ae52754506ac1cb59f315c4ba1ff22c4d448dbf11a821725fe0bddbc98993</originalsourceid><addsrcrecordid>eNotjztPwzAYAC0EEqEw8A-8Mrj48zsjinhJlToUFpbIdmxilCbBTof-e0B0Ot1y0iF0C3QNVPF7WHPFhGH6DFVAtSYcwJyjilLKiaolXKKrUr5-VTLOK2S285K8HfCcpznkJYWCp4j79Nnj74Md0nLEzYF9jLtxFwRe-jTimIZ9uUYX0Q4l3Jy4Qu9Pj2_NC9lsn1-bhw3xTNGF8M4pGyTTUkiqrAfvZB05SC-chRgZ86ITwnQuAljDQDMZA3Vd53xt6pqv0N1_1-eplBxiO-e0t_nYAm3_lltoT8v8BxVuR_M</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Optical properties of high quality Cu2ZnSnSe4 thin films</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>American Institute of Physics</source><creator>Luckert, F. ; Hamilton, D. I. ; Yakushev, M. V. ; Beattie, N. S. ; Zoppi, G. ; Moynihan, M. ; Forbes, I. ; Karotki, A. V. ; Mudryi, A. V. ; Grossberg, M. ; Krustok, J. ; Martin, R. W.</creator><creatorcontrib>Luckert, F. ; Hamilton, D. I. ; Yakushev, M. V. ; Beattie, N. S. ; Zoppi, G. ; Moynihan, M. ; Forbes, I. ; Karotki, A. V. ; Mudryi, A. V. ; Grossberg, M. ; Krustok, J. ; Martin, R. W.</creatorcontrib><description>Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3624827</identifier><language>eng</language><ispartof>Applied physics letters, 2011-08, Vol.99 (6)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c260t-3db6ae52754506ac1cb59f315c4ba1ff22c4d448dbf11a821725fe0bddbc98993</citedby><cites>FETCH-LOGICAL-c260t-3db6ae52754506ac1cb59f315c4ba1ff22c4d448dbf11a821725fe0bddbc98993</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Luckert, F.</creatorcontrib><creatorcontrib>Hamilton, D. I.</creatorcontrib><creatorcontrib>Yakushev, M. V.</creatorcontrib><creatorcontrib>Beattie, N. S.</creatorcontrib><creatorcontrib>Zoppi, G.</creatorcontrib><creatorcontrib>Moynihan, M.</creatorcontrib><creatorcontrib>Forbes, I.</creatorcontrib><creatorcontrib>Karotki, A. V.</creatorcontrib><creatorcontrib>Mudryi, A. V.</creatorcontrib><creatorcontrib>Grossberg, M.</creatorcontrib><creatorcontrib>Krustok, J.</creatorcontrib><creatorcontrib>Martin, R. W.</creatorcontrib><title>Optical properties of high quality Cu2ZnSnSe4 thin films</title><title>Applied physics letters</title><description>Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotjztPwzAYAC0EEqEw8A-8Mrj48zsjinhJlToUFpbIdmxilCbBTof-e0B0Ot1y0iF0C3QNVPF7WHPFhGH6DFVAtSYcwJyjilLKiaolXKKrUr5-VTLOK2S285K8HfCcpznkJYWCp4j79Nnj74Md0nLEzYF9jLtxFwRe-jTimIZ9uUYX0Q4l3Jy4Qu9Pj2_NC9lsn1-bhw3xTNGF8M4pGyTTUkiqrAfvZB05SC-chRgZ86ITwnQuAljDQDMZA3Vd53xt6pqv0N1_1-eplBxiO-e0t_nYAm3_lltoT8v8BxVuR_M</recordid><startdate>20110808</startdate><enddate>20110808</enddate><creator>Luckert, F.</creator><creator>Hamilton, D. I.</creator><creator>Yakushev, M. V.</creator><creator>Beattie, N. S.</creator><creator>Zoppi, G.</creator><creator>Moynihan, M.</creator><creator>Forbes, I.</creator><creator>Karotki, A. V.</creator><creator>Mudryi, A. V.</creator><creator>Grossberg, M.</creator><creator>Krustok, J.</creator><creator>Martin, R. W.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110808</creationdate><title>Optical properties of high quality Cu2ZnSnSe4 thin films</title><author>Luckert, F. ; Hamilton, D. I. ; Yakushev, M. V. ; Beattie, N. S. ; Zoppi, G. ; Moynihan, M. ; Forbes, I. ; Karotki, A. V. ; Mudryi, A. V. ; Grossberg, M. ; Krustok, J. ; Martin, R. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c260t-3db6ae52754506ac1cb59f315c4ba1ff22c4d448dbf11a821725fe0bddbc98993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luckert, F.</creatorcontrib><creatorcontrib>Hamilton, D. I.</creatorcontrib><creatorcontrib>Yakushev, M. V.</creatorcontrib><creatorcontrib>Beattie, N. S.</creatorcontrib><creatorcontrib>Zoppi, G.</creatorcontrib><creatorcontrib>Moynihan, M.</creatorcontrib><creatorcontrib>Forbes, I.</creatorcontrib><creatorcontrib>Karotki, A. V.</creatorcontrib><creatorcontrib>Mudryi, A. V.</creatorcontrib><creatorcontrib>Grossberg, M.</creatorcontrib><creatorcontrib>Krustok, J.</creatorcontrib><creatorcontrib>Martin, R. W.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luckert, F.</au><au>Hamilton, D. I.</au><au>Yakushev, M. V.</au><au>Beattie, N. S.</au><au>Zoppi, G.</au><au>Moynihan, M.</au><au>Forbes, I.</au><au>Karotki, A. V.</au><au>Mudryi, A. V.</au><au>Grossberg, M.</au><au>Krustok, J.</au><au>Martin, R. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties of high quality Cu2ZnSnSe4 thin films</atitle><jtitle>Applied physics letters</jtitle><date>2011-08-08</date><risdate>2011</risdate><volume>99</volume><issue>6</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.</abstract><doi>10.1063/1.3624827</doi><oa>free_for_read</oa></addata></record>
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1077-3118
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title Optical properties of high quality Cu2ZnSnSe4 thin films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T14%3A53%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optical%20properties%20of%20high%20quality%20Cu2ZnSnSe4%20thin%20films&rft.jtitle=Applied%20physics%20letters&rft.au=Luckert,%20F.&rft.date=2011-08-08&rft.volume=99&rft.issue=6&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3624827&rft_dat=%3Ccrossref%3E10_1063_1_3624827%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c260t-3db6ae52754506ac1cb59f315c4ba1ff22c4d448dbf11a821725fe0bddbc98993%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true