Comparison of quantum well and single heterojunction structures for acoustic charge transfer devices

• Published in: Journal of applied physics 1996-06, Vol.79 (11), p.8792-8797
• Main Authors: Hayden, R. K., Woods, R. C., Kumagai, S., Yamanouchi, K., Grey, R.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.362668

A number of acoustic charge transfer devices have been fabricated, using both a single heterojunction structure and a quantum well structure. The single heterojunction structure was found to give a signal-to-noise ratio comparable to that given by the quantum well structure. In both cases the ratio was less than unity. The experimental results show that the performance of acoustic charge transfer devices using heterostructures is less dependent on the quality of the epitaxial growth than has previously been believed. The single heterojunction structure has been modelled to show that a device with high signal-to-noise ratio is difficult to obtain. However, the experimental results show that this is not essential for observation of acoustic charge transfer. This combination of results and the present limitations of epitaxial growth show that quantum well structures have little or no practical advantage over single heterojunction structures for use as acoustic charge transfer devices.