Interdiffusion of lateral composition modulated (GaP)2/(InP)2 short-period superlattices with different encapsulants

The interdiffusion of lateral composition modulated (GaP)2/(InP) 2 short-period superlattices (SPSs) is reported. The lateral composition modulation is achieved by the strain induced lateral layer ordering (SILO) process. A blueshift in the interband transition is observed by photoluminescence spect...

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Published in:Journal of applied physics 1996-07, Vol.80 (2), p.1233-1235
Main Authors: Malin, J. I., Chen, A. C., Bonkowski, J. E., Baker, J. E., Cheng, K. Y., Hsieh, K. C.
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Language:English
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description The interdiffusion of lateral composition modulated (GaP)2/(InP) 2 short-period superlattices (SPSs) is reported. The lateral composition modulation is achieved by the strain induced lateral layer ordering (SILO) process. A blueshift in the interband transition is observed by photoluminescence spectroscopy for capless and SiO 2 encapsulated annealed SPSs (800 °C, 5.5 h), while the intensity and wavelength of Si3N4 encapsulated annealed SPSs are only slightly perturbed. From transmission electron microscopy, capless annealed SPSs (800 °C, 5.5 h) retain their lateral composition modulation, however, the (001/2) satellite reflections disappear. For long anneal times (48 h), the interband transition corresponds to that of a In0.50Ga 0.50P alloy, suggesting the lateral composition modulation disappears. The observed lateral interdiffusion coefficient exceeds the vertical by a factor of ∼30, suggesting SPS interdiffusion is enhanced by native point defects.
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title Interdiffusion of lateral composition modulated (GaP)2/(InP)2 short-period superlattices with different encapsulants
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