Monte Carlo study of electron transport in III–V heterostructures with doped quantum wells

The transport properties of AlGaAs/GaAs/AlGaAs heterostructures with doped GaAs quantum well have been investigated by means of an ensemble Monte Carlo method. The model accounts for nonparabolicity, size quantization in all valleys, and degeneracy. The influence of doping profile, density of donors...

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Bibliographic Details
Published in:Journal of applied physics 1996-07, Vol.80 (2), p.928-935
Main Authors: Thobel, J. L., Sleiman, A., Bourel, P., Dessenne, F., Baudry, L.
Format: Article
Language:English
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Summary:The transport properties of AlGaAs/GaAs/AlGaAs heterostructures with doped GaAs quantum well have been investigated by means of an ensemble Monte Carlo method. The model accounts for nonparabolicity, size quantization in all valleys, and degeneracy. The influence of doping profile, density of donors and electrons, well width, and temperature are discussed. Both steady state and transient transport have been studied, and the possibility of strong velocity overshoot has been demonstrated. The electron velocity may be strongly influenced by the spatial distribution of impurities. The choice of a doping plane located at one edge of the well allows for obtaining the highest values of mobility, static peak velocity, and maximum transient velocity. At high fields, some parasitic conduction takes place in the barriers and the transport properties are strongly affected by the characteristics of the AlGaAs layers.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.362903