Paramagnetic defect spin centers in low-pressure chemical-vapor-deposited silicon-dioxide films

• Published in: Journal of applied physics 1996-09, Vol.80 (6), p.3430-3434
• Main Authors: Kamigaki, Yoshiaki, Yokogawa, Ken’etsu, Hashimoto, Takashi, Uemura, Toshio
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.363211

We have found E′-like and amorphous-siliconlike (a-Si-like, ⋅Si≡Si3) spin centers, as well as the well-known E′ center (⋅Si≡O3) in low-pressure chemical-vapor-deposited silicon-dioxide (LPCVD-SiO2) films, by using the electron-spin-resonance method. The behavior of these paramagnetic defect centers is studied and their origins are considered. An E′-like center is terminated stably by either oxygen (O2) or hydrogen (H2) gas annealing. This E′-like center appears to be an intermediately generated defect but its bonding structure has not yet been identified. The a-Si-like center is terminated stably by high-temperature H2 gas annealing. The a-Si-like center is thought to exist in the Si clusters in LPCVD-SiO2 films. We have also confirmed that the E′ center is terminated stably by O2 gas annealing. As a result, we conclude that both O2 and H2 gas annealing are necessary to reduce the quantity of paramagnetic defect centers in LPCVD-SiO2 films.