Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentra...

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Bibliographic Details
Published in:Journal of applied physics 2011-09, Vol.110 (6), p.063708-063708-5
Main Authors: Rougieux, F. E., Lim, B., Schmidt, J., Forster, M., Macdonald, D., Cuevas, A.
Format: Article
Language:English
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Summary:In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500°C to 700°C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3633492