Effective interband g factors in diluted magnetic semiconductor Cd1− x Fe x Te

The effective interband g factors γΓ and γL at the Γ and L points of the Brillouin zone for Cd1−xFexTe with x=0.01 and 0.04 have been determined in the temperature range of 70–300 K from Faraday rotation measurements. The results show that the dominant contribution to γΓ is due to the sp–d exchange...

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Published in:Journal of applied physics 1996-10, Vol.80 (8), p.4421-4424
Main Authors: Wang, Xuezhong, Chen, Chenjia, Liu, Anwen, Wang, Rongming, Ma, Kejun
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Language:English
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cited_by cdi_FETCH-LOGICAL-c722-ee792e4cd3e62fb9b3f66c2e85de0fae0b58fd28d164115e69b3431ce668d7b03
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description The effective interband g factors γΓ and γL at the Γ and L points of the Brillouin zone for Cd1−xFexTe with x=0.01 and 0.04 have been determined in the temperature range of 70–300 K from Faraday rotation measurements. The results show that the dominant contribution to γΓ is due to the sp–d exchange interaction between Fe2+ ions and free carriers, while the intrinsic contribution is dominant for γL. The exchange interaction integral N0(β−α) at the Γ point has also been obtained.
doi_str_mv 10.1063/1.363402
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title Effective interband g factors in diluted magnetic semiconductor Cd1− x Fe x Te
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