X-ray photoelectron spectroscopic investigation of carbon incorporation and segregation during pseudomorphic growth of Si1− y C y on Si(001)

An important issue for the epitaxial growth of strained Si1−yCy alloy layers is the relation between substitutional and interstitial carbon incorporation, which is strongly influenced by the growth conditions. We use in vacuu x-ray photoelectron spectroscopy (XPS) to investigate Si1−yCy layers (y...

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Bibliographic Details
Published in:Journal of applied physics 1996-11, Vol.80 (10), p.5748-5752
Main Authors: Kim, Myeongcheol, Lippert, G., Osten, H. J.
Format: Article
Language:English
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Summary:An important issue for the epitaxial growth of strained Si1−yCy alloy layers is the relation between substitutional and interstitial carbon incorporation, which is strongly influenced by the growth conditions. We use in vacuu x-ray photoelectron spectroscopy (XPS) to investigate Si1−yCy layers (y
ISSN:0021-8979
1089-7550
DOI:10.1063/1.363569