A road to hydrogenating graphene by a reactive ion etching plasma

We report the hydrogenation of single and bilayer graphene by an argon-hydrogen plasma produced in a reactive ion etching (RIE) system. Electronic transport measurements in combination with Raman spectroscopy are used to link the electric mean free path to the optically extracted defect concentratio...

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Bibliographic Details
Published in:Journal of applied physics 2011-09, Vol.110 (6), p.063715-063715-6
Main Authors: Wojtaszek, M., Tombros, N., Caretta, A., van Loosdrecht, P. H. M., van Wees, B. J.
Format: Article
Language:English
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Summary:We report the hydrogenation of single and bilayer graphene by an argon-hydrogen plasma produced in a reactive ion etching (RIE) system. Electronic transport measurements in combination with Raman spectroscopy are used to link the electric mean free path to the optically extracted defect concentration. We emphasize the role of the self-bias of the graphene in suppressing the erosion of the flakes during plasma processing. We show that under the chosen plasma conditions the process does not introduce considerable damage to the graphene sheet and that hydrogenation occurs primarily due to the hydrogen ions from the plasma and not due to fragmentation of water adsorbates on the graphene surface by highly accelerated plasma electrons. For this reason the hydrogenation level can be precisely controlled. The hydrogenation process presented here can be easily implemented in any RIE plasma system.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3638696