Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN

Threading dislocations that are of a type were observed to form locally in InGaN layers and wells containing 7%-15% indium. Direct correlations between a type dislocations and stacking faults in InGaN layers and wells were observed. The formation of these dislocations is attributed to the dissociati...

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Bibliographic Details
Published in:Journal of applied physics 2011-10, Vol.110 (7), p.073503-073503-6
Main Authors: Meng, F. Y., McFelea, H., Datta, R., Chowdhury, U., Werkhoven, C., Arena, C., Mahajan, S.
Format: Article
Language:English
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Summary:Threading dislocations that are of a type were observed to form locally in InGaN layers and wells containing 7%-15% indium. Direct correlations between a type dislocations and stacking faults in InGaN layers and wells were observed. The formation of these dislocations is attributed to the dissociation of Shockley partials bounding the stacking faults.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3643001