Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

This study examined the effect of the thickness of interfacial indium-tin oxide (ITO) on the performance and bias reliability of zinc-tin oxide (ZTO) thin film transistors (TFTs). The 3.5-nm-thick ITO-inserted ZTO TFTs exhibited superior mobility (43.2 cm 2 /V s) to that of the ZTO only TFTs (31.6 c...

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Published in:Applied physics letters 2011-09, Vol.99 (12), p.122102-122102-3
Main Authors: Kim, Ji-In, Hwan Ji, Kwang, Yoon Jung, Hong, Yeob Park, Se, Choi, Rino, Jang, Mi, Yang, Hoichang, Kim, Dae-Hwan, Bae, Jong-Uk, Dong Kim, Chang, Kyeong Jeong, Jae
Format: Article
Language:English
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Summary:This study examined the effect of the thickness of interfacial indium-tin oxide (ITO) on the performance and bias reliability of zinc-tin oxide (ZTO) thin film transistors (TFTs). The 3.5-nm-thick ITO-inserted ZTO TFTs exhibited superior mobility (43.2 cm 2 /V s) to that of the ZTO only TFTs (31.6 cm 2 /V s). Furthermore, the threshold voltage shifts for the ZTO/ITO bi-layer device decreased from 1.43 and −0.88 V (ZTO only device) to 0.46 V and −0.41 V under positive and negative bias stress, respectively. This improvement can be attributed to a decrease in the interfacial trap density for the ITO-inserted ZTO device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3643054