Evidence of lattice tilt and slip in m-plane InGaN/GaN heterostructure

Using high-resolution microbeam x-ray diffraction and cross-section transmission electron microscopy, we investigated in-plane anisotropy resulting from epilayer lattice tilts in heteroepitaxial InGaN on a m-plane GaN substrate. The in-plane structure consists of two lattice tilts along the [ 11 2 ¯...

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Bibliographic Details
Published in:Applied physics letters 2011-09, Vol.99 (13), p.131909-131909-3
Main Authors: Yoshida, Shunji, Yokogawa, Toshiya, Imai, Yasuhiko, Kimura, Shigeru, Sakata, Osami
Format: Article
Language:English
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Summary:Using high-resolution microbeam x-ray diffraction and cross-section transmission electron microscopy, we investigated in-plane anisotropy resulting from epilayer lattice tilts in heteroepitaxial InGaN on a m-plane GaN substrate. The in-plane structure consists of two lattice tilts along the [ 11 2 ¯ 0 ] direction corresponding to ( 10 1 ¯ 0 ) and ( 0 1 ¯ 10 ) slip planes inclined at roughly 60° from the m-plane. Based on the Peierls-Nabarro model, we explain this structure by proposing a slip system via the { 10 1 ¯ 0 } prism plane with 〈 11 2 ¯ 0 〉 -type slip directions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3644978