Symmetry-dependence of electronic grain boundary properties in polycrystalline CuInSe2 thin films

The symmetry-dependence of electronic grain boundary (GB) properties in polycrystalline CuInSe2 thin films was investigated in a combined study applying scanning electron microscopy, electron backscatter diffraction, and Kelvin probe force microscopy. We find that highly symmetric Σ3 GBs have a high...

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Bibliographic Details
Published in:Applied physics letters 2011-10, Vol.99 (17)
Main Authors: Baier, Robert, Abou-Ras, Daniel, Rissom, Thorsten, Lux-Steiner, Martha Ch, Sadewasser, Sascha
Format: Article
Language:English
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Summary:The symmetry-dependence of electronic grain boundary (GB) properties in polycrystalline CuInSe2 thin films was investigated in a combined study applying scanning electron microscopy, electron backscatter diffraction, and Kelvin probe force microscopy. We find that highly symmetric Σ3 GBs have a higher probability to be charge neutral than lower symmetric non-Σ3 GBs. This symmetry-dependence can help to explain the large variations of electronic properties found for GBs in Cu(In,Ga)Se2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3652915