Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

We report on the calculation of the two dimension electron gas (2DEG) mobility in scaled AlGaN/GaN metal-insulator-semiconductor high-electron-mobility-transistors. We investigate the effect of remote impurity and phonon scattering models on the 2DEG mobility of the dielectric/AlGaN/GaN structure an...

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Bibliographic Details
Published in:Applied physics letters 2011-10, Vol.99 (16), p.162104-162104-3
Main Authors: Hung, Ting-Hsiang, Esposto, Michele, Rajan, Siddharth
Format: Article
Language:English
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Summary:We report on the calculation of the two dimension electron gas (2DEG) mobility in scaled AlGaN/GaN metal-insulator-semiconductor high-electron-mobility-transistors. We investigate the effect of remote impurity and phonon scattering models on the 2DEG mobility of the dielectric/AlGaN/GaN structure and investigate its variation with dielectric/AlGaN interface charge density, 2DEG concentration, and AlGaN thickness. Remote impurity scattering was found to be the dominant mechanism when the 2DEG density is below 5×10 12 cm −2 and dielectric/AlGaN interface charge density is above 5×10 12 cm −2 . The interfacial charge has significant effect on the mobility as the AlGaN cap layer thickness is scaled down below 5nm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3653805