Effects of evanescent modes and subband mixing in resonant tunneling transistors

We theoretically investigate a gated resonant tunneling diode as a potential new quantum resonant tunneling transistor. The resonant tunneling transistor is dimensionally controllable in the active channel using a lateral depletion region. Under bias conditions in which the resonant tunneling transi...

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Bibliographic Details
Published in:Journal of applied physics 1997-06, Vol.81 (12), p.8064-8073
Main Authors: Lee, Chomsik, Weichold, Mark H.
Format: Article
Language:English
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Summary:We theoretically investigate a gated resonant tunneling diode as a potential new quantum resonant tunneling transistor. The resonant tunneling transistor is dimensionally controllable in the active channel using a lateral depletion region. Under bias conditions in which the resonant tunneling transistor reaches zero dimensionality in the well region, we consider the attractive and repulsive perturbation potentials (Vpe) of impurity or defect scattering in source and well regions. A transfer matrix formalism is employed to calculate the transmission probabilities and current densities through the double barrier, and we describe the scattering matrices using the presence of evanescent modes in various lateral confinement configurations. We discuss the effect of scattering and subband mixing on the current-voltage characteristics of resonant tunneling transistors.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.365413