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Theory on the quantum confinement-luminescence center model for nanocrystalline and porous Si

This article demonstrates, from the theoretical point of view, that owing to the phonon-assisted relaxation rate of the excited electron-hole pair’s transiting to lower states decreases as the scale of Si particle is reduced, the optically excited electron-hole pair in the nanometer silicon particle...

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Bibliographic Details
Published in:Journal of applied physics 1997-09, Vol.82 (5), p.2572-2579
Main Authors: Qin, G., Qin, G. G.
Format: Article
Language:English
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Summary:This article demonstrates, from the theoretical point of view, that owing to the phonon-assisted relaxation rate of the excited electron-hole pair’s transiting to lower states decreases as the scale of Si particle is reduced, the optically excited electron-hole pair in the nanometer silicon particle with sufficient small scale generally tunnel into the SiOx layers which enclose the Si particles and recombine radiatively through the luminescence centers there to emit visible light rather than recombine radiatively in the Si particles. It is proved also that when the density of the luminescence center is 2.5×1022/m3, the upper limit of the average scale of the nanometer silicon particles in the ensemble capable of emitting red light in room temperature is around 8.7 nm, which is much bigger than the generally estimated value of 3 nm.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.366068