Annealing effect on magnetic and electrical properties of epitaxial La0.8MnO3−δ thin films grown by chemical vapor deposition

A new liquid source metalorganic chemical vapor deposition process has been developed in order to control precisely the amount of precursors vapors that is produced. Films of self-doped La0.8MnO3−δ have been deposited on LaAlO3 (012) substrates. X-ray diffraction measurements reveal an epitaxial gro...

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Bibliographic Details
Published in:Journal of applied physics 1997-11, Vol.82 (9), p.4445-4448
Main Authors: Pignard, S., Vincent, H., Sénateur, J. P., Pierre, J., Abrutis, A.
Format: Article
Language:English
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Summary:A new liquid source metalorganic chemical vapor deposition process has been developed in order to control precisely the amount of precursors vapors that is produced. Films of self-doped La0.8MnO3−δ have been deposited on LaAlO3 (012) substrates. X-ray diffraction measurements reveal an epitaxial growth. The as-deposited films exhibit both a ferromagnetic (Tc=200 K) and a metal–insulator (Tρ=130 K) transition. Postannealing experiments have been carried out and the results indicate the resistivity is considerably reduced, the temperature of transitions is raised to 320 K, and a magnetoresistance Δρ/ρ0=20% per tesla is obtained at 300 K in the 0–2 T range.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.366174