Temperature-dependence and microscopic origin of low frequency 1/ f noise in GaN/AlGaN high electron mobility transistors

We have performed low frequency 1/ f noise measurements from 85K to 450K to investigate the energy distribution of defects in GaN/AlGaN high electron mobility transistors fabricated in three different processes. The noise is well described by the model of P. Dutta and P. M. Horn, Rev. Mod. Phys. 53...

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Published in:Applied physics letters 2011-11, Vol.99 (20), p.203501-203501-3
Main Authors: Roy, T., Zhang, E. X., Puzyrev, Y. S., Shen, X., Fleetwood, D. M., Schrimpf, R. D., Koblmueller, G., Chu, R., Poblenz, C., Fichtenbaum, N., Suh, C. S., Mishra, U. K., Speck, J. S., Pantelides, S. T.
Format: Article
Language:English
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Summary:We have performed low frequency 1/ f noise measurements from 85K to 450K to investigate the energy distribution of defects in GaN/AlGaN high electron mobility transistors fabricated in three different processes. The noise is well described by the model of P. Dutta and P. M. Horn, Rev. Mod. Phys. 53 , 497 (1981). A peak in the defect energy distribution is observed at ∼0.2eV for all device types investigated, which we attribute to the reconfiguration of an oxygen DX-like center in AlGaN. An additional peak at an energy >1eV is observed for devices grown under nitrogen-rich conditions, which we attribute to the reconfiguration energy of negatively charged nitrogen antisites.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3662041