Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures

In this paper, we present a study of the effect of temperature on the two-dimensional electron mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in unintentionally doped Al x Ga 1−x N/AlN/GaN heterostructures. The analysis of our results clearly indicates...

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Bibliographic Details
Published in:Journal of applied physics 2011-12, Vol.110 (11), p.113713-113713-7
Main Authors: Asgari, A., Babanejad, S., Faraone, L.
Format: Article
Language:English
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Summary:In this paper, we present a study of the effect of temperature on the two-dimensional electron mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in unintentionally doped Al x Ga 1−x N/AlN/GaN heterostructures. The analysis of our results clearly indicates that the effect of partial sub-band occupancy is considerable, especially at higher operating temperatures when more than one sub-band is occupied. The comparison of our calculated results with published experimental data is shown to be in good agreement.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3665124